Product Details
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| Product Attribute | Attribute Value |
|---|---|
| Active Area | 0.144 sq.in. |
| Capacitance, Junction | 1.75 nF |
| Current, Dark | 0.05 μA |
| Operating Temperature | -40 to 105 °C |
| Package Type | Case 44A |
| Primary Type | Photo |
| Product Header | VTS Process Photodiode |
| Resistance, Shunt | 1.2 Megohms |
| Series | |
| Spectral Application Range | 400 to 1100 nm |
| Spectral Sensitivity | 0.6 A/W |
| Voltage, Breakdown | 6 V |
| Voltage, Open Circuit | 0.45 V |
Overview
This series of planar, P on N, large area silicon photodiodes are designed for use in photovoltaic (unbiased) mode. Their excellent speed and broadband sensitivity make them ideal for detecting light from a variety of sources such as LEDs, IREDs, flashtubes, incandescent lamps, laters, etc. Improvded shunt resistance minimized amplifier offset and drift in high gain systems. The solderable contact system on these photodiodes provides a cost effective design solution for many applications.
